Recent Developments in Computer Modeling of Amorphous Materials

Gorde:
Xehetasun bibliografikoak
Argitaratua izan da:arXiv.org (Dec 23, 2003), p. n/a
Egile nagusia: Drabold, D A
Beste egile batzuk: Biswas, P, Tafen, D, Atta-Fynn, R
Argitaratua:
Cornell University Library, arXiv.org
Gaiak:
Sarrera elektronikoa:Citation/Abstract
Full text outside of ProQuest
Etiketak: Etiketa erantsi
Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!

MARC

LEADER 00000nab a2200000uu 4500
001 2090819840
003 UK-CbPIL
022 |a 2331-8422 
035 |a 2090819840 
045 0 |b d20031223 
100 1 |a Drabold, D A 
245 1 |a Recent Developments in Computer Modeling of Amorphous Materials 
260 |b Cornell University Library, arXiv.org  |c Dec 23, 2003 
513 |a Working Paper 
520 3 |a In this paper, we review some recent work on amorphous materials using current "first principles" electronic structure/molecular dynamics techniques. The main theme of the paper is to emphasize new directions in the use of such ab initio methods. Some of these, being quite new, need development, but we believe have promise for solving new and important kinds of problems in the physics of glassy and amorphous materials. Initially, we discuss first principles calculations in broad outline and comment on the various approximations in common use. Then, we describe methods for forming a computer model of amorphous materials. This is an area of intense activity and methods beyond the obvious "quench from the melt" method are showing promise and utility. In this paper, we discuss a new method: "Decorate and Relax", and a new implementation of the Reverse Monte Carlo method. Finally, we discuss the computation of electronic properties, especially carrier transport and time evolution of electron states. 
653 |a Methods 
653 |a First principles 
653 |a Amorphous materials 
653 |a Carrier transport 
653 |a Molecular dynamics 
653 |a Electronic structure 
653 |a Molecular structure 
653 |a Electronic properties 
653 |a Computer simulation 
653 |a Approximation 
653 |a Electron states 
653 |a Monte Carlo simulation 
700 1 |a Biswas, P 
700 1 |a Tafen, D 
700 1 |a Atta-Fynn, R 
773 0 |t arXiv.org  |g (Dec 23, 2003), p. n/a 
786 0 |d ProQuest  |t Engineering Database 
856 4 1 |3 Citation/Abstract  |u https://www.proquest.com/docview/2090819840/abstract/embedded/IZYTEZ3DIR4FRXA2?source=fedsrch 
856 4 0 |3 Full text outside of ProQuest  |u http://arxiv.org/abs/cond-mat/0312607