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Pure spin current injection of single-layer monochalcogenides

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Publicado en:Materials Research Express vol. 10, no. 3 (Mar 2023), p. 035003
Autor principal: Mendoza, Bernardo S
Otros Autores: Grillo, Simone, Juárez-Reyes, Lucila, Fregoso, Benjamin M
Publicado:
IOP Publishing
Materias:
Tin selenide
Photons
Spintronics
Cadmium selenides
Current injection
Germanium sulfide
Spin-orbit interactions
Electron spin
Linear polarization
Polarized light
Ferroelectricity
Spin dynamics
Density functional theory
Orbital mechanics
Acceso en línea:Citation/Abstract
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Resumen:We compute the spectrum of pure spin current injection in ferroelectric single-layer SnS, SnSe, GeS, and GeSe. The formalism takes into account the coherent spin dynamics of optically excited conduction states split in energy by spin–orbit coupling. The velocity of the electron’s spins is calculated as a function of incoming photon energy and angle of linearly polarized light within a full electronic band structure scheme using density functional theory. We find peak speeds of 520, 360, 270 and 370 Km s−1 for SnS, SnSe, GeS and GeSe, respectively which are an order of magnitude larger than those found in bulk semiconductors, e.g., GaAs and CdSe. Interestingly, the spin velocity is almost independent of the direction of polarization of light in a range of photon energies. Our results demonstrate that single-layer SnS, SnSe, GeS and GeSe are candidates to produce on demand spin-current in spintronics applications.
ISSN:2053-1591
DOI:10.1088/2053-1591/acbf99
Fuente:Materials Science Database