Adaptative machine vision with microsecond-level accurate perception beyond human retina
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| Udgivet i: | Nature Communications vol. 15, no. 1 (2024), p. 6261 |
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| Andre forfattere: | , , , , , , , , , , , , , , |
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Nature Publishing Group
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| Online adgang: | Citation/Abstract Full Text - PDF |
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| 003 | UK-CbPIL | ||
| 022 | |a 2041-1723 | ||
| 024 | 7 | |a 10.1038/s41467-024-50488-6 |2 doi | |
| 035 | |a 3084105198 | ||
| 045 | 2 | |b d20240101 |b d20241231 | |
| 084 | |a 145839 |2 nlm | ||
| 100 | 1 | |a Li, Ling |u South China Normal University, School of Semiconductor Science and Technology, Foshan, P.R. China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397) | |
| 245 | 1 | |a Adaptative machine vision with microsecond-level accurate perception beyond human retina | |
| 260 | |b Nature Publishing Group |c 2024 | ||
| 513 | |a Journal Article | ||
| 520 | 3 | |a Visual adaptive devices have potential to simplify circuits and algorithms in machine vision systems to adapt and perceive images with varying brightness levels, which is however limited by sluggish adaptation process. Here, the avalanche tuning as feedforward inhibition in bionic two-dimensional (2D) transistor is proposed for fast and high-frequency visual adaptation behavior with microsecond-level accurate perception, the adaptation speed is over 104 times faster than that of human retina and reported bionic sensors. As light intensity changes, the bionic transistor spontaneously switches between avalanche and photoconductive effect, varying responsivity in both magnitude and sign (from 7.6 × 104 to −1 × 103 A/W), thereby achieving ultra-fast scotopic and photopic adaptation process of 108 and 268 μs, respectively. By further combining convolutional neural networks with avalanche-tuned bionic transistor, an adaptative machine vision is achieved with remarkable microsecond-level rapid adaptation capabilities and robust image recognition with over 98% precision in both dim and bright conditions.Visual adaptive devices show promise for simplifying circuits and algorithms in machine vision systems. Here, the authors report a visual adaptive transistor with tunable avalanche effects and microsecond-level bionic vision capabilities, recognizing images in dim and bright conditions with over 98% accuracy. | |
| 653 | |a Visual perception | ||
| 653 | |a Light intensity | ||
| 653 | |a Algorithms | ||
| 653 | |a Luminous intensity | ||
| 653 | |a Vision systems | ||
| 653 | |a Artificial neural networks | ||
| 653 | |a Adaptation | ||
| 653 | |a Visual pathways | ||
| 653 | |a Circuits | ||
| 653 | |a Transistors | ||
| 653 | |a Visual effects | ||
| 653 | |a Visual perception driven algorithms | ||
| 653 | |a Retina | ||
| 653 | |a Adaptive algorithms | ||
| 653 | |a Adaptive systems | ||
| 653 | |a Avalanche transistors | ||
| 653 | |a Machine vision | ||
| 653 | |a Bionics | ||
| 653 | |a Images | ||
| 653 | |a Information processing | ||
| 653 | |a Neural networks | ||
| 653 | |a Environmental | ||
| 700 | 1 | |a Li, Shasha |u Chaohu University, School of Electronic Engineering, Hefei, China (GRID:grid.440674.5) (ISNI:0000 0004 1757 4908) | |
| 700 | 1 | |a Wang, Wenhai |u South China Normal University, School of Semiconductor Science and Technology, Foshan, P.R. China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397) | |
| 700 | 1 | |a Zhang, Jielian |u South China Normal University, School of Semiconductor Science and Technology, Foshan, P.R. China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397) | |
| 700 | 1 | |a Sun, Yiming |u South China Normal University, School of Semiconductor Science and Technology, Foshan, P.R. China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397) | |
| 700 | 1 | |a Deng, Qunrui |u South China Normal University, School of Semiconductor Science and Technology, Foshan, P.R. China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397) | |
| 700 | 1 | |a Zheng, Tao |u South China Normal University, School of Semiconductor Science and Technology, Foshan, P.R. China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397) | |
| 700 | 1 | |a Lu, Jianting |u China Electronic Product Reliability and Environmental Testing Research Institute, National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component, Guangzhou, China (GRID:grid.482554.a) (ISNI:0000 0004 7470 4983) | |
| 700 | 1 | |a Gao, Wei |u South China Normal University, School of Semiconductor Science and Technology, Foshan, P.R. China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397) | |
| 700 | 1 | |a Yang, Mengmeng |u South China Normal University, School of Semiconductor Science and Technology, Foshan, P.R. China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397) | |
| 700 | 1 | |a Wang, Hanyu |u South China Normal University, School of Semiconductor Science and Technology, Foshan, P.R. China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397) | |
| 700 | 1 | |a Pan, Yuan |u South China Normal University, School of Semiconductor Science and Technology, Foshan, P.R. China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397) | |
| 700 | 1 | |a Liu, Xueting |u South China Normal University, School of Semiconductor Science and Technology, Foshan, P.R. China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397) | |
| 700 | 1 | |a Yang, Yani |u South China Normal University, School of Semiconductor Science and Technology, Foshan, P.R. China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397) | |
| 700 | 1 | |a Li, Jingbo |u College of Optical Science and Engineering, Hangzhou, China (GRID:grid.13402.34) (ISNI:0000 0004 1759 700X); Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, P.R. China (GRID:grid.484195.5) | |
| 700 | 1 | |a Huo, Nengjie |u South China Normal University, School of Semiconductor Science and Technology, Foshan, P.R. China (GRID:grid.263785.d) (ISNI:0000 0004 0368 7397); Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, P.R. China (GRID:grid.484195.5) | |
| 773 | 0 | |t Nature Communications |g vol. 15, no. 1 (2024), p. 6261 | |
| 786 | 0 | |d ProQuest |t Health & Medical Collection | |
| 856 | 4 | 1 | |3 Citation/Abstract |u https://www.proquest.com/docview/3084105198/abstract/embedded/L8HZQI7Z43R0LA5T?source=fedsrch |
| 856 | 4 | 0 | |3 Full Text - PDF |u https://www.proquest.com/docview/3084105198/fulltextPDF/embedded/L8HZQI7Z43R0LA5T?source=fedsrch |