Mid-Infrared High-Power InGaAsSb/AlGaInAsSb Multiple-Quantum-Well Laser Diodes Around 2.9 μm

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Bibliographische Detailangaben
Veröffentlicht in:	Nanomaterials vol. 15, no. 2 (2025), p. 139
1. Verfasser:	Yu, Hongguang
Weitere Verfasser:	Yang, Chengao, Chen, Yihang, Shi, Jianmei, Cao, Juntian, Geng, Zhengqi, Wang, Zhiyuan, Wen, Haoran, Zhang, Enquan, Zhang, Yu, Tan, Hao, Wu, Donghai, Xu, Yingqiang, Ni, Haiqiao, Niu, Zhichuan
Veröffentlicht:	MDPI AG
Schlagworte:	Spinodal decomposition Electrons Luminous efficacy Valence band Room temperature Quantum efficiency Heat sinks Semiconductor lasers Infrared spectra Diodes Radiative recombination Efficiency Emitters Photons Absorption loss Infrared lasers Laser beam cladding Injection current Interdiffusion Lasers Temperature Process controls Miscibility Quantum well lasers Wave power Compressive properties Recombination Continuous radiation Photoluminescence Active regions (lasers) Well hole
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