Analysis of Edge Termination Techniques for Gallium Nitride Pseudo-Vertical p-n Diodes: Modeling Based on Technology Computer-Aided Design and Review of Current Developments
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| Publicado no: | Electronics vol. 14, no. 6 (2025), p. 1188 |
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| Autor principal: | |
| Outros Autores: | , , , |
| Publicado em: |
MDPI AG
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| Acesso em linha: | Citation/Abstract Full Text + Graphics Full Text - PDF |
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| 045 | 2 | |b d20250101 |b d20251231 | |
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| 100 | 1 | |a Mohammed El Amrani |u Université Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France; <email>philippe.godignon@cea.fr</email> (P.G.); <email>matthew.charles@cea.fr</email> (M.C.); GREMAN UMR 7347, Université de Tours, CNRS, INSA Centre Val de Loire, 37071 Tours, France; <email>daniel.alquier@univ-tours.fr</email> | |
| 245 | 1 | |a Analysis of Edge Termination Techniques for Gallium Nitride Pseudo-Vertical p-n Diodes: Modeling Based on Technology Computer-Aided Design and Review of Current Developments | |
| 260 | |b MDPI AG |c 2025 | ||
| 513 | |a Journal Article | ||
| 520 | 3 | |a Edge termination techniques play a crucial role in enhancing the breakdown voltage (BV) and managing electric field distribution in GaN-based power devices. This review explores six key termination methods—field plate (FP), mesa, bevel, trench, ion implantation, and guard ring (GR)—with a focus on their performance, fabrication complexity, and insights derived from TCAD simulations. FP and trench terminations excel in high-voltage applications due to their superior electric field control but are accompanied by significant fabrication challenges. Mesa and bevel terminations, while simpler and cost-effective, are more suited for medium-voltage applications. Ion implantation and GR techniques strike a balance, offering customizable parameters for improved BV performance. TCAD simulations provide a robust framework for analyzing these techniques, highlighting optimal configurations and performance trade-offs. The choice of edge termination depends on the specific application, balancing BV requirements with manufacturing feasibility. This review offers a comprehensive comparison, emphasizing the critical role of simulations in guiding the selection and design of edge termination techniques for GaN power devices. | |
| 653 | |a Simulation | ||
| 653 | |a Diodes | ||
| 653 | |a Bevels | ||
| 653 | |a Electric fields | ||
| 653 | |a Ion implantation | ||
| 653 | |a Configuration management | ||
| 653 | |a Computer aided design--CAD | ||
| 653 | |a Gallium nitrides | ||
| 653 | |a Electronic devices | ||
| 653 | |a Energy consumption | ||
| 653 | |a Feasibility studies | ||
| 700 | 1 | |a Buckley, Julien |u Université Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France; <email>philippe.godignon@cea.fr</email> (P.G.); <email>matthew.charles@cea.fr</email> (M.C.) | |
| 700 | 1 | |a Alquier, Daniel |u GREMAN UMR 7347, Université de Tours, CNRS, INSA Centre Val de Loire, 37071 Tours, France; <email>daniel.alquier@univ-tours.fr</email> | |
| 700 | 1 | |a Godignon, Philippe |u Université Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France; <email>philippe.godignon@cea.fr</email> (P.G.); <email>matthew.charles@cea.fr</email> (M.C.) | |
| 700 | 1 | |a Charles, Matthew |u Université Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France; <email>philippe.godignon@cea.fr</email> (P.G.); <email>matthew.charles@cea.fr</email> (M.C.) | |
| 773 | 0 | |t Electronics |g vol. 14, no. 6 (2025), p. 1188 | |
| 786 | 0 | |d ProQuest |t Advanced Technologies & Aerospace Database | |
| 856 | 4 | 1 | |3 Citation/Abstract |u https://www.proquest.com/docview/3181456250/abstract/embedded/Q8Z64E4HU3OH5N8U?source=fedsrch |
| 856 | 4 | 0 | |3 Full Text + Graphics |u https://www.proquest.com/docview/3181456250/fulltextwithgraphics/embedded/Q8Z64E4HU3OH5N8U?source=fedsrch |
| 856 | 4 | 0 | |3 Full Text - PDF |u https://www.proquest.com/docview/3181456250/fulltextPDF/embedded/Q8Z64E4HU3OH5N8U?source=fedsrch |