Effect of substitution and processing on the morphology and dielectric properties of Pr2/3Cu3Ti4O12 (PCTO) ceramic

שמור ב:
מידע ביבליוגרפי
הוצא לאור ב:The International Journal of Ceramic Engineering & Science vol. 7, no. 3 (May 1, 2025)
מחבר ראשי: Arnold, Bradley
מחברים אחרים: Su, Ching Hua, Choa, Fow‐Sen, Cullum, Brian, deCarvalho, Tagide, Prasad, Narsimha S., Gower, Lauren N., Darden, Anna C., Machuga, Krishna S., Singh, Narsingh Bahadur
יצא לאור:
John Wiley & Sons, Inc.
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גישה מקוונת:Citation/Abstract
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024 7 |a 10.1002/ces2.70004  |2 doi 
035 |a 3207575680 
045 0 |b d20250501 
100 1 |a Arnold, Bradley  |u Department of Chemistry and Biochemistry, University of Maryland, Baltimore, Maryland, USA 
245 1 |a Effect of substitution and processing on the morphology and dielectric properties of Pr2/3Cu3Ti4O12 (PCTO) ceramic 
260 |b John Wiley & Sons, Inc.  |c May 1, 2025 
513 |a Journal Article 
520 3 |a Low‐cost, large dielectric constant, and resistivity materials have wide range of applications for radio frequency systems, flash memory devices to ferroelectric switches, and energy storage applications. The paper reports on the development and characterization of high‐resistivity Pr2/3Cu3Ti4O12 (PCTO) ceramics developed by doping with Ca2+ and Sr2+ ions under various processing conditions. In particular, synthesis and growth were performed at 1173 and 1273 K resulting in significant difference in both electrical and morphological properties. To alter the distortion and polarity of ceramics, low concentration (0.15 mole fraction) of Ca2+ and Sr2+ hetero‐valent ions with different size were substituted for Pr3+. The evolution and sizes of non‐spherical, non‐faceted grains altered to facet shapes due to changes in the anisotropy developed with increased copper concentration in the grains. The morphology analysis at these low processing temperatures revealed that grain growth occurs by engulfment of smaller grains by larger grains, necking process, and channel formation, with particles growing in nanometer size to greater than 10 µm and forming new layers on top of grains. The migration of copper‐rich phases above 1173 K from boundaries to grains causes faceted morphology in both pure and substituted PCTO. Finally, by substituting Ca2+ and Sr2+ into the ceramics, altering the processing temperature, resistivity, and dielectric constant significantly increased. The substituted ceramics showed a higher dielectric constant at applied frequencies of 100‒100 000 Hz and did not vary at bias voltages of 50‒1000 mV, indicating no breakdown of the ceramics. 
653 |a Dielectric properties 
653 |a Research methodology 
653 |a Flash memory (computers) 
653 |a Grain growth 
653 |a Morphology 
653 |a Substitutes 
653 |a Ceramics 
653 |a Anisotropy 
653 |a Copper 
653 |a Memory devices 
653 |a Electrical resistivity 
653 |a Ferroelectricity 
653 |a Data storage 
653 |a Calcium ions 
700 1 |a Su, Ching Hua  |u NASA Marshall Space Flight Center, Huntsville, Alabama, USA 
700 1 |a Choa, Fow‐Sen  |u Department of Chemistry and Biochemistry, and Computer Science and Electrical Engineering, University of Maryland, Baltimore, Maryland, USA 
700 1 |a Cullum, Brian  |u Department of Chemistry and Biochemistry, University of Maryland, Baltimore, Maryland, USA 
700 1 |a deCarvalho, Tagide  |u Department of Physics, University of Maryland, Baltimore, Maryland, USA 
700 1 |a Prasad, Narsimha S.  |u NASA Langley Research Center, Hampton, Virginia, USA 
700 1 |a Gower, Lauren N.  |u Department of Chemistry and Biochemistry, University of Maryland, Baltimore, Maryland, USA 
700 1 |a Darden, Anna C.  |u Department of Chemistry and Biochemistry, University of Maryland, Baltimore, Maryland, USA 
700 1 |a Machuga, Krishna S.  |u University of Maryland, College Park, Maryland, USA 
700 1 |a Singh, Narsingh Bahadur  |u Department of Chemistry and Biochemistry, and Computer Science and Electrical Engineering, University of Maryland, Baltimore, Maryland, USA 
773 0 |t The International Journal of Ceramic Engineering & Science  |g vol. 7, no. 3 (May 1, 2025) 
786 0 |d ProQuest  |t Engineering Database 
856 4 1 |3 Citation/Abstract  |u https://www.proquest.com/docview/3207575680/abstract/embedded/75I98GEZK8WCJMPQ?source=fedsrch 
856 4 0 |3 Full Text  |u https://www.proquest.com/docview/3207575680/fulltext/embedded/75I98GEZK8WCJMPQ?source=fedsrch 
856 4 0 |3 Full Text - PDF  |u https://www.proquest.com/docview/3207575680/fulltextPDF/embedded/75I98GEZK8WCJMPQ?source=fedsrch