Quantum emission from coupled spin pairs in hexagonal boron nitride

Guardat en:
Dades bibliogràfiques
Publicat a:Nature Communications vol. 16, no. 1 (2025), p. 5842
Autor principal: Li, Song
Altres autors: Pershin, Anton, Gali, Adam
Publicat:
Nature Publishing Group
Matèries:
Accés en línia:Citation/Abstract
Full Text
Full Text - PDF
Etiquetes: Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!

MARC

LEADER 00000nab a2200000uu 4500
001 3226269610
003 UK-CbPIL
022 |a 2041-1723 
024 7 |a 10.1038/s41467-025-61388-8  |2 doi 
035 |a 3226269610 
045 2 |b d20250101  |b d20251231 
084 |a 145839  |2 nlm 
100 1 |a Li, Song  |u HUN-REN Wigner Research Centre for Physics, Budapest, Hungary (GRID:grid.419766.b) (ISNI:0000 0004 1759 8344); Beijing Computational Science Research Center, Beijing, China (GRID:grid.410743.5) (ISNI:0000 0004 0586 4246) 
245 1 |a Quantum emission from coupled spin pairs in hexagonal boron nitride 
260 |b Nature Publishing Group  |c 2025 
513 |a Journal Article 
520 3 |a Optically addressable defect qubits in wide band gap materials are favorable candidates for room-temperature quantum information processing. Two-dimensional (2D) hexagonal boron nitride (hBN) is an attractive solid-state platform with great potential for hosting bright quantum emitters and quantum memories, leveraging the advantages of 2D materials for scalable preparation of defect qubits. Although room-temperature bright defect qubits have been recently reported in hBN, their microscopic origin, the nature of the optical transition, and the optically detected magnetic resonance (ODMR) have remained elusive. Here, we connect the variance in the optical spectra, optical lifetimes, and spectral stability of quantum emitters to donor-acceptor pairs (DAPs) in hBN through ab initio calculations. We find that DAPs can exhibit ODMR signals for the acceptor counterpart of the defect pair with an S = 1/2 ground state at non-zero magnetic fields, depending on the donor partner and dominantly mediated by the hyperfine interaction. The donor-acceptor pair model and its transition mechanisms provide a recipe for defect qubit identification and performance optimization in hBN for quantum applications.Optically active defects in wide band gap materials are promising building block for room temperature quantum information processing. Here, the authors connect the experimental variance in the optical spectra, optical lifetimes and spectral stability of quantum emitters to the distance-dependent donor-acceptor pairs in the two-dimensional hexagonal boron nitride. 
653 |a Boron 
653 |a Data processing 
653 |a Electrons 
653 |a Defects 
653 |a Optical activity 
653 |a Room temperature 
653 |a Symmetry 
653 |a Energy 
653 |a Boron nitride 
653 |a Two dimensional materials 
653 |a Nitrogen 
653 |a Qubits (quantum computing) 
653 |a Emitters 
653 |a Quantum phenomena 
653 |a Optically detected magnetic resonance 
653 |a Carbon 
653 |a Energy gap 
653 |a Spectral emittance 
653 |a Optical transition 
653 |a Magnetic fields 
653 |a Optical properties 
653 |a Information processing 
653 |a Stability 
653 |a Bright plating 
653 |a Magnetic resonance 
653 |a Environmental 
700 1 |a Pershin, Anton  |u HUN-REN Wigner Research Centre for Physics, Budapest, Hungary (GRID:grid.419766.b) (ISNI:0000 0004 1759 8344); Institute of Physics, Budapest University of Technology and Economics, Department of Atomic Physics, Budapest, Hungary (GRID:grid.6759.d) (ISNI:0000 0001 2180 0451) 
700 1 |a Gali, Adam  |u HUN-REN Wigner Research Centre for Physics, Budapest, Hungary (GRID:grid.419766.b) (ISNI:0000 0004 1759 8344); Institute of Physics, Budapest University of Technology and Economics, Department of Atomic Physics, Budapest, Hungary (GRID:grid.6759.d) (ISNI:0000 0001 2180 0451); MTA-WFK Lendulet “Momentum” Semiconductor Nanostructures Research Group, Budapest, Hungary (GRID:grid.5018.c) (ISNI:0000 0001 2149 4407) 
773 0 |t Nature Communications  |g vol. 16, no. 1 (2025), p. 5842 
786 0 |d ProQuest  |t Health & Medical Collection 
856 4 1 |3 Citation/Abstract  |u https://www.proquest.com/docview/3226269610/abstract/embedded/6A8EOT78XXH2IG52?source=fedsrch 
856 4 0 |3 Full Text  |u https://www.proquest.com/docview/3226269610/fulltext/embedded/6A8EOT78XXH2IG52?source=fedsrch 
856 4 0 |3 Full Text - PDF  |u https://www.proquest.com/docview/3226269610/fulltextPDF/embedded/6A8EOT78XXH2IG52?source=fedsrch