Real-Time Temperature Estimation of the Machine Drive SiC Modules Consisting of Parallel Chips per Switch for Reliability Modelling and Lifetime Prediction

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Publicado en:Machines vol. 13, no. 8 (2025), p. 689-717
Autor principal: Kamel Tamer
Otros Autores: Olagunju Olamide, Johnson, Temitope
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MDPI AG
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Acceso en línea:Citation/Abstract
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LEADER 00000nab a2200000uu 4500
001 3244045170
003 UK-CbPIL
022 |a 2075-1702 
024 7 |a 10.3390/machines13080689  |2 doi 
035 |a 3244045170 
045 2 |b d20250101  |b d20251231 
084 |a 231531  |2 nlm 
100 1 |a Kamel Tamer 
245 1 |a Real-Time Temperature Estimation of the Machine Drive SiC Modules Consisting of Parallel Chips per Switch for Reliability Modelling and Lifetime Prediction 
260 |b MDPI AG  |c 2025 
513 |a Journal Article 
520 3 |a This paper presents a new methodical procedure to monitor in real time the junction temperature of SiC Power MOSFET modules of parallel-connected chips utilized in machine drive systems to develop their reliability modelling and predict their lifetime. The paper implements the on-line measurements of temperature-sensitive electrical parameters (TSEP) approach, particularly the quasi-threshold voltage and the on-state drain to source voltage, to estimate the junction temperature in real time. The proposed procedure firstly applied computational fluid dynamics analysis on the module under study to determine the chip which undergoes the maximum junction temperature during typical operation of the module. Then, a calibration phase, using double-pulse tests on the selected chip, is used to generate look-up tables to relate the TSEPs under study to the junction temperature. Next, the real-time estimation of junction temperature was accomplished during the on-line operation of the three-phase inverter, taking into account the induced distortion/noises due to operation of the parallel-connected chips in the module. After that, a comparison between the two TSEPs under study was provided to demonstrate their advantages/drawbacks. Finally, reliability modelling was developed to predict the lifetime of the studied module based on the estimated junction temperature under a predetermined mission profile. 
653 |a Reliability analysis 
653 |a Dielectric properties 
653 |a Threshold voltage 
653 |a Thermal cycling 
653 |a Semiconductors 
653 |a Lookup tables 
653 |a Parameter sensitivity 
653 |a Modelling 
653 |a Temperature 
653 |a Modules 
653 |a Computational fluid dynamics 
653 |a Real time 
653 |a Parallel connected 
653 |a Silicon carbide 
700 1 |a Olagunju Olamide 
700 1 |a Johnson, Temitope 
773 0 |t Machines  |g vol. 13, no. 8 (2025), p. 689-717 
786 0 |d ProQuest  |t Engineering Database 
856 4 1 |3 Citation/Abstract  |u https://www.proquest.com/docview/3244045170/abstract/embedded/7BTGNMKEMPT1V9Z2?source=fedsrch 
856 4 0 |3 Full Text + Graphics  |u https://www.proquest.com/docview/3244045170/fulltextwithgraphics/embedded/7BTGNMKEMPT1V9Z2?source=fedsrch 
856 4 0 |3 Full Text - PDF  |u https://www.proquest.com/docview/3244045170/fulltextPDF/embedded/7BTGNMKEMPT1V9Z2?source=fedsrch