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Ferroelectric-based Pockels photonic memory

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Publicado en:Nature Communications vol. 16, no. 1 (2025), p. 8329-8340
Autor principal: Xu, Zefeng
Otros Autores: Chen, Chun-Kuei, Lin, Hong-Lin, Sivan, Maheswari, Zamburg, Evgeny, Lee, James Yong-Meng, Venkatesan, Suresh, Danner, Aaron, Thean, Aaron Voon-Yew
Publicado:
Nature Publishing Group
Materias:
Ferroelectric domains
Data transfer (computers)
Semiconductors
Energy efficiency
Lithium
CMOS
Lithium niobates
Ferroelectricity
Semiconductor devices
Optical memory (data storage)
Transistors
Optics
Ferroelectrics
Energy consumption
Resonators
Silicon nitride
Artificial intelligence
Energy costs
Field effect transistors
Electric fields
Ferroelectric materials
Memory devices
Energy dissipation
Indium
Photonics
Environmental
Acceso en línea:Citation/Abstract
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Resumen:Efficient data transfer between memory and photonic components is crucial for a wide range of applications. However, this necessity brings forth energy-efficient data movement challenges associated with the memory wall, underscoring the demand for a fast and low-energy electro-optic photonic memory solution. Here, we demonstrate a class of energy-efficient electro-optic devices, namely Pockels photonic memory, that combines low-field switchable ferroelectrics with lithium niobate’s Pockel’s effect. Among such devices, this article will describe in detail the integrated embodiment of a ferroelectric field-effect transistor with lithium niobate on insulator micro ring resonator. We achieve switchable and non-volatile multiple optical memory states (6 states per transistor) with ultra-low energy cost (femto Joule/state), while achieving robust 10 year data retention and read-write endurance exceeding 107 cycles. Furthermore, we demonstrate the possibility of linear memory state stacking. The Pockels photonic memory enables the scaling of reconfigurable photonic systems into the femto Joule/state energy efficiencies.Xu et al. report a Pockels photonic memory by integrating ferroelectric field-effect transistor with lithium niobate on insulator micro ring resonator. Through the manipulation of ferroelectric domains and the Pockels effect, the device achieves energy consumption at fJ/state level.
ISSN:2041-1723
DOI:10.1038/s41467-025-63850-z
Fuente:Health & Medical Collection