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A Study on Step-Barrier Structures for Radio Frequency AlGaN High Electron Mobility Transistors

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Vydáno v:ProQuest Dissertations and Theses (2025)
Hlavní autor: Watson, Carina Lauren
Vydáno:
ProQuest Dissertations & Theses
Témata:
Electrical engineering
Computer engineering
Computer science
On-line přístup:Citation/Abstract
Full Text - PDF
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100 1 |a Watson, Carina Lauren 
245 1 |a A Study on Step-Barrier Structures for Radio Frequency AlGaN High Electron Mobility Transistors 
260 |b ProQuest Dissertations & Theses  |c 2025 
513 |a Dissertation/Thesis 
520 3 |a The barrier layer for an Aluminum Gallium Nitride (AlGaN) High Electron Mobility Transistor (HEMT) on silicon is studied. The objective is to optimize the high frequency performance with a practical fabrication process. Devices with standard barrier layers and step-barrier structures are simulated and analysed using Sentaurus Technology Computer Aided Design (TCAD) and correlated with experimental results. An AlGaN HEMT with an optimized step-barrier structure can attain a unity current gain frequency of ft = 52 GHz, a 21% increase when compared to the standard device. Based on trends in the unity current gain frequency, a method for determining the critical thickness of the step-barrier is proposed. 
653 |a Electrical engineering 
653 |a Computer engineering 
653 |a Computer science 
773 0 |t ProQuest Dissertations and Theses  |g (2025) 
786 0 |d ProQuest  |t ProQuest Dissertations & Theses Global 
856 4 1 |3 Citation/Abstract  |u https://www.proquest.com/docview/3276363711/abstract/embedded/L8HZQI7Z43R0LA5T?source=fedsrch 
856 4 0 |3 Full Text - PDF  |u https://www.proquest.com/docview/3276363711/fulltextPDF/embedded/L8HZQI7Z43R0LA5T?source=fedsrch