Imagen de Portada

New Amorphous Hole Blocking Materials for High Efficiency OLEDs

Guardado en:
Publicado en:Journal of Nanoscience and Nanotechnology vol. 8, no. 9 (Sept. 2008), p. 4838-4841
Autor principal: Jung, Sung Ouk
Otros Autores: Park, Jong-Won, Kang, Dong Min, Kim, Jeong-Sik, Park, Sung-Jin, Kang, Pengtao, Oh, Hyoung-Yun, Yang, Jung-Hwan, Kim, Yun-Hi, Kwon, Soon-Ki
Publicado:
American Scientific Publishers, 2560 North Lewis Way, Stevenson Ranch, CA, 91381-1439, USA, [mailto:jnn@aspbs.comu], [URL:http://www.aspbs.com/jnn]
Materias:
Devices
Amorphous materials
Electroluminescence
Compact disks
Power efficiency
Light-emitting diodes
Acceso en línea:Citation/Abstract
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
Resumen:Two new amorphous molecular materials, 2,5-bis(2',5'-dimethyl-4-triphenylsilyl-phenyl)-[1,3,4]oxadiazole (BDTSO) and 2,5-bis(2',5'-dimethyl-4-triphenylsilyl-phenyl)-[1,3,4]thiadiazole (BDTST) were synthesized and investigated as hole blocking materials (HBM) for organic light-emitting diodes. The efficiency of electroluminescent device was improved by using BDTSO instead of BAlq. The current and power efficiency of the device using BDTSO as HBM is 39.6 cd/A and 13.1 lm/W at 10 mA/cm2, respectively, which is higher compared to the same values for devices using BDTST and BAq which are typically used as HBM.
ISSN:1533-4880
DOI:10.1166/jnn.2008.IC68
Fuente:Materials Science Index