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Comparison of different sensor thicknesses and substrate materials for the monolithic small collection-electrode technology demonstrator CLICTD

Guardado en:
Publicado en:arXiv.org (Aug 30, 2022), p. n/a
Autor principal: Dort, Katharina
Otros Autores: Ballabriga, Rafael, Braach, Justus, Buschmann, Eric, Campbell, Michael, Dannheim, Dominik, Huth, Lennart, Kremastiotis, Iraklis, Kröger, Jens, Linssen, Lucie, Munker, Magdalena, Snoeys, Walter, Spannagel, Simon, Švihra, Peter, Vanat, Tomas
Publicado:
Cornell University Library, arXiv.org
Materias:
Epitaxial layers
Electrodes
Substrates
Sensors
Technology demonstrator
Charged particles
Collection
CMOS
Particle beams
Electrical resistivity
Thin films
Power consumption
Thickness
Signal to noise ratio
Acceso en línea:Citation/Abstract
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Resumen:Small collection-electrode monolithic CMOS sensors profit from a high signal-to-noise ratio and a small power consumption, but have a limited active sensor volume due to the fabrication process based on thin high-resistivity epitaxial layers. In this paper, the active sensor depth is investigated in the monolithic small collection-electrode technology demonstrator CLICTD. Charged particle beams are used to study the charge-collection properties and the performance of devices with different thicknesses both for perpendicular and inclined particle incidence. In CMOS sensors with a high-resistivity Czochralski substrate, the depth of the sensitive volume is found to increase by a factor two in comparison with standard epitaxial material and leads to significant improvements in the hit-detection efficiency and the spatial and time resolution.
ISSN:2331-8422
DOI:10.1016/j.nima.2022.167413
Fuente:Engineering Database