Artificial Neural Network based Modelling for Variational Effect on Double Metal Double Gate Negative Capacitance FET

Salvato in:

Dettagli Bibliografici
Pubblicato in:	arXiv.org (Dec 18, 2024), p. n/a
Autore principale:	Pathak, Yash
Altri autori:	Laxman Prasad Goswami, Bansi Dhar Malhotra, Chaujar, Rishu
Pubblicazione:	Cornell University Library, arXiv.org
Soggetti:	Integrated circuits Nanotechnology devices Field effect transistors Artificial neural networks Ferroelectric materials Neural networks Nanoelectronics Capacitance Visual fields Computing costs Algorithms High level languages Python Ferroelectricity Semiconductor devices Machine learning Visual effects Leakage current Parameters Thickness
Accesso online:	Citation/Abstract Full text outside of ProQuest
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!

Descrizione
Abstract:	In this work, we have implemented an accurate machine-learning approach for predicting various key analog and RF parameters of Negative Capacitance Field-Effect Transistors (NCFETs). Visual TCAD simulator and the Python high-level language were employed for the entire simulation process. However, the computational cost was found to be excessively high. The machine learning approach represents a novel method for predicting the effects of different sources on NCFETs while also reducing computational costs. The algorithm of an artificial neural network can effectively predict multi-input to single-output relationships and enhance existing techniques. The analog parameters of Double Metal Double Gate Negative Capacitance FETs (D2GNCFETs) are demonstrated across various temperatures (\(T\)), oxide thicknesses (\(T_{ox}\)), substrate thicknesses (\(T_{sub}\)), and ferroelectric thicknesses (\(T_{Fe}\)). Notably, at \(T=300K\), the switching ratio is higher and the leakage current is \(84\) times lower compared to \(T=500K\). Similarly, at ferroelectric thicknesses \(T_{Fe}=4nm\), the switching ratio improves by \(5.4\) times compared to \(T_{Fe}=8nm\). Furthermore, at substrate thicknesses \(T_{sub}=3nm\), switching ratio increases by \(81\%\) from \(T_{sub}=7nm\). For oxide thicknesses at \(T_{ox}=0.8nm\), the ratio increases by \(41\%\) compared to \(T_{ox}=0.4nm\). The analysis reveals that \(T_{Fe}=4nm\), \(T=300K\), \(T_{ox}=0.8nm\), and \(T_{sub}=3nm\) represent the optimal settings for D2GNCFETs, resulting in significantly improved performance. These findings can inform various applications in nanoelectronic devices and integrated circuit (IC) design.
ISSN:	2331-8422
Fonte:	Engineering Database