Weak-Light-Enhanced AlGaN/GaN UV Phototransistors with a Buried p-GaN Structure
-д хадгалсан:
| -д хэвлэсэн: | Electronics vol. 14, no. 10 (2025), p. 2076 |
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| Үндсэн зохиолч: | |
| Бусад зохиолчид: | , , , , , , , , |
| Хэвлэсэн: |
MDPI AG
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| Нөхцлүүд: | |
| Онлайн хандалт: | Citation/Abstract Full Text + Graphics Full Text - PDF |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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MARC
| LEADER | 00000nab a2200000uu 4500 | ||
|---|---|---|---|
| 001 | 3211940383 | ||
| 003 | UK-CbPIL | ||
| 022 | |a 2079-9292 | ||
| 024 | 7 | |a 10.3390/electronics14102076 |2 doi | |
| 035 | |a 3211940383 | ||
| 045 | 2 | |b d20250101 |b d20251231 | |
| 084 | |a 231458 |2 nlm | ||
| 100 | 1 | |a Wang, Haiping | |
| 245 | 1 | |a Weak-Light-Enhanced AlGaN/GaN UV Phototransistors with a Buried p-GaN Structure | |
| 260 | |b MDPI AG |c 2025 | ||
| 513 | |a Journal Article | ||
| 520 | 3 | |a We propose a novel ultraviolet (UV) phototransistor (PT) architecture based on an AlGaN/GaN high electron mobility transistor (HEMT) with a buried p-GaN layer. In the dark, the polarization-induced two-dimensional electron gas (2DEG) at the AlGaN/GaN heterojunction interface is depleted by the buried p-GaN and the conduction channel is closed. Under UV illumination, the depletion region shrinks to just beneath the AlGaN/GaN interface and the 2DEG recovers. The retraction distance of the depletion region during device turn-on operation is comparable to the thickness of the AlGaN barrier layer, which is an order of magnitude smaller than that in the conventional p-GaN/AlGaN/GaN PT, whose retraction distance spans the entire GaN channel layer. Consequently, the proposed device demonstrates significantly enhanced weak-light detection capability and improved switching speed. Silvaco Atlas simulations reveal that under a weak UV intensity of 100 nW/cm2, the proposed device achieves a photocurrent density of 1.68 × 10−3 mA/mm, responsivity of 8.41 × 105 A/W, photo-to-dark-current ratio of 2.0 × 108, UV-to-visible rejection ratio exceeding 108, detectivity above 1 × 1019 cm·Hz1/2/W, and response time of 0.41/0.41 ns. The electron concentration distributions, conduction band variations, and 2DEG recovery behaviors in both the conventional and novel structures under dark and weak UV illumination are investigated in depth via simulations. | |
| 653 | |a High electron mobility transistors | ||
| 653 | |a Conduction bands | ||
| 653 | |a Depletion | ||
| 653 | |a Gallium nitrides | ||
| 653 | |a Photoelectric effect | ||
| 653 | |a Electric fields | ||
| 653 | |a Aluminum gallium nitrides | ||
| 653 | |a Barrier layers | ||
| 653 | |a Buried structures | ||
| 653 | |a Semiconductor devices | ||
| 653 | |a Phototransistors | ||
| 653 | |a Electron gas | ||
| 653 | |a Light | ||
| 653 | |a Performance evaluation | ||
| 653 | |a Illumination | ||
| 653 | |a Heterojunctions | ||
| 700 | 1 | |a Zhang, Feiyu | |
| 700 | 1 | |a Zhao Xuzhi | |
| 700 | 1 | |a You Haifan | |
| 700 | 1 | |a Ma, Zhan | |
| 700 | 1 | |a Ye Jiandong | |
| 700 | 1 | |a Lu, Hai | |
| 700 | 1 | |a Zhang, Rong | |
| 700 | 1 | |a Zheng Youdou | |
| 700 | 1 | |a Chen Dunjun | |
| 773 | 0 | |t Electronics |g vol. 14, no. 10 (2025), p. 2076 | |
| 786 | 0 | |d ProQuest |t Advanced Technologies & Aerospace Database | |
| 856 | 4 | 1 | |3 Citation/Abstract |u https://www.proquest.com/docview/3211940383/abstract/embedded/7BTGNMKEMPT1V9Z2?source=fedsrch |
| 856 | 4 | 0 | |3 Full Text + Graphics |u https://www.proquest.com/docview/3211940383/fulltextwithgraphics/embedded/7BTGNMKEMPT1V9Z2?source=fedsrch |
| 856 | 4 | 0 | |3 Full Text - PDF |u https://www.proquest.com/docview/3211940383/fulltextPDF/embedded/7BTGNMKEMPT1V9Z2?source=fedsrch |