Comparative Analysis of Digital Circuits in CNTFET and CMOS Technology: A Review

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Detalles Bibliográficos
Publicado en:i-Manager's Journal on Electronics Engineering vol. 16, no. 1 (Dec 2025)
Autor principal: Marani, Roberto
Otros Autores: Perri, Anna Gina
Publicado:
iManager Publications
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Acceso en línea:Citation/Abstract
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Descripción
Resumen:This paper reviews in depth a procedure to compare the performance of CNTFET and MOSFET devices through the design of a SRAM cell. The results indicate that both technologies enable the realization of low-power devices, with CNTFET technology exhibiting higher speed. Comparative simulations highlight significant improvements in switching delay and energy efficiency when operating in the sub-threshold region using CNTFETs. The findings confirm CNTFET suitability for ultra-low-power and high-frequency applications, positioning it as a strong alternative to traditional CMOS in next-generation memory architectures.
ISSN:2229-7286
2249-0760
DOI:10.26634/jele.16.1.22210
Fuente:Advanced Technologies & Aerospace Database