Comparative Analysis of Digital Circuits in CNTFET and CMOS Technology: A Review
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| Vydáno v: | i-Manager's Journal on Electronics Engineering vol. 16, no. 1 (Dec 2025) |
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| 024 | 7 | |a 10.26634/jele.16.1.22210 |2 doi | |
| 035 | |a 3275454235 | ||
| 045 | 2 | |b d20251201 |b d20251231 | |
| 084 | |a 215931 |2 nlm | ||
| 100 | 1 | |a Marani, Roberto | |
| 245 | 1 | |a Comparative Analysis of Digital Circuits in CNTFET and CMOS Technology: A Review | |
| 260 | |b iManager Publications |c Dec 2025 | ||
| 513 | |a Journal Article | ||
| 520 | 3 | |a This paper reviews in depth a procedure to compare the performance of CNTFET and MOSFET devices through the design of a SRAM cell. The results indicate that both technologies enable the realization of low-power devices, with CNTFET technology exhibiting higher speed. Comparative simulations highlight significant improvements in switching delay and energy efficiency when operating in the sub-threshold region using CNTFETs. The findings confirm CNTFET suitability for ultra-low-power and high-frequency applications, positioning it as a strong alternative to traditional CMOS in next-generation memory architectures. | |
| 653 | |a Power management | ||
| 653 | |a CMOS | ||
| 653 | |a Digital electronics | ||
| 653 | |a Circuits | ||
| 653 | |a Computer engineering | ||
| 653 | |a Simulation | ||
| 653 | |a Libraries | ||
| 653 | |a Transistors | ||
| 653 | |a Hypotheses | ||
| 653 | |a Comparative analysis | ||
| 700 | 1 | |a Perri, Anna Gina | |
| 773 | 0 | |t i-Manager's Journal on Electronics Engineering |g vol. 16, no. 1 (Dec 2025) | |
| 786 | 0 | |d ProQuest |t Advanced Technologies & Aerospace Database | |
| 856 | 4 | 1 | |3 Citation/Abstract |u https://www.proquest.com/docview/3275454235/abstract/embedded/6A8EOT78XXH2IG52?source=fedsrch |
| 856 | 4 | 0 | |3 Full Text - PDF |u https://www.proquest.com/docview/3275454235/fulltextPDF/embedded/6A8EOT78XXH2IG52?source=fedsrch |