Structure-Optimized Photonic Phase-Change Memory Achieving High Storage Density and Endurance Towards Reconfigurable Telecommunication Systems

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Detalles Bibliográficos
Publicado en:	Photonics vol. 12, no. 11 (2025), p. 1130-1143
Autor principal:	Chen, Gao
Otros Autores:	Zhou, Han, Wang, Gaofei, Huang, Wentao
Publicado:	MDPI AG
Materias:	United States > US Germany China Japan Computation Data storage Optimization Photonic crystals Data processing Storage capacity Phase change materials Cylinders Density Energy consumption Chips (memory devices) Reconfiguration Immunological memory Computer memory Electromagnetic absorption Lasers Endurance Delay lines Phase transitions Arrays Durability Silicon wafers Photonics
Acceso en línea:	Citation/Abstract Full Text + Graphics Full Text - PDF
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