A Study on Step-Barrier Structures for Radio Frequency AlGaN High Electron Mobility Transistors
-д хадгалсан:
| -д хэвлэсэн: | ProQuest Dissertations and Theses (2025) |
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| Үндсэн зохиолч: | |
| Хэвлэсэн: |
ProQuest Dissertations & Theses
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| Нөхцлүүд: | |
| Онлайн хандалт: | Citation/Abstract Full Text - PDF |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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| Хураангуй: | The barrier layer for an Aluminum Gallium Nitride (AlGaN) High Electron Mobility Transistor (HEMT) on silicon is studied. The objective is to optimize the high frequency performance with a practical fabrication process. Devices with standard barrier layers and step-barrier structures are simulated and analysed using Sentaurus Technology Computer Aided Design (TCAD) and correlated with experimental results. An AlGaN HEMT with an optimized step-barrier structure can attain a unity current gain frequency of ft = 52 GHz, a 21% increase when compared to the standard device. Based on trends in the unity current gain frequency, a method for determining the critical thickness of the step-barrier is proposed. |
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| ISBN: | 9798265437938 |
| Эх сурвалж: | ProQuest Dissertations & Theses Global |