صورة الغلاف

CdTe Thin Films prepared by thermal evaporation on Silicon substrate for photocurrent device Applications

محفوظ في:
الحاوية / القاعدة:Journal of Physics: Conference Series vol. 1963, no. 1 (Jul 2021)
المؤلف الرئيسي: Ali Hameed Rasheed
مؤلفون آخرون: Lamyaa Mohammed Raoof, abd, Ahmed N
منشور في:
IOP Publishing
الموضوعات:
Silicon substrates
Photoelectric emission
Evaporation
Photovoltaic cells
Thin films
Energy gap
Photoelectric effect
Heterojunctions
Glass substrates
Cadmium tellurides
Optical properties
الوصول للمادة أونلاين:Citation/Abstract
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مستخلص:In this works, CdTe was deposited on glass and Si substrates using thermal evaporation techniques. CdTe has been investigated from the properties (structural, surface morphological, optical and electrical). XRD analyses found the monocrystallite, cubic structure of the CdTe thin film and there is no trace of the other material. UV-Vis measurements indicate that 1.51 eV was found the energy gap of the CdTe thin film. Ag/CdTe/Si/Ag The heterojunction Photodetector has two response peaks located at 450 nm and 900 nm with a maximum sensitivity and detectivity of Ag/CdTe/Si/Ag 0.22 A/W and 3.1×1012 respectively.
تدمد:1742-6588
1742-6596
DOI:10.1088/1742-6596/1963/1/012137
المصدر:Advanced Technologies & Aerospace Database