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CdTe Thin Films prepared by thermal evaporation on Silicon substrate for photocurrent device Applications

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Publicat a:Journal of Physics: Conference Series vol. 1963, no. 1 (Jul 2021)
Autor principal: Ali Hameed Rasheed
Altres autors: Lamyaa Mohammed Raoof, abd, Ahmed N
Publicat:
IOP Publishing
Matèries:
Silicon substrates
Photoelectric emission
Evaporation
Photovoltaic cells
Thin films
Energy gap
Photoelectric effect
Heterojunctions
Glass substrates
Cadmium tellurides
Optical properties
Accés en línia:Citation/Abstract
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Resum:In this works, CdTe was deposited on glass and Si substrates using thermal evaporation techniques. CdTe has been investigated from the properties (structural, surface morphological, optical and electrical). XRD analyses found the monocrystallite, cubic structure of the CdTe thin film and there is no trace of the other material. UV-Vis measurements indicate that 1.51 eV was found the energy gap of the CdTe thin film. Ag/CdTe/Si/Ag The heterojunction Photodetector has two response peaks located at 450 nm and 900 nm with a maximum sensitivity and detectivity of Ag/CdTe/Si/Ag 0.22 A/W and 3.1×1012 respectively.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1963/1/012137
Font:Advanced Technologies & Aerospace Database