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CdTe Thin Films prepared by thermal evaporation on Silicon substrate for photocurrent device Applications

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Xuất bản năm:Journal of Physics: Conference Series vol. 1963, no. 1 (Jul 2021)
Tác giả chính: Ali Hameed Rasheed
Tác giả khác: Lamyaa Mohammed Raoof, abd, Ahmed N
Được phát hành:
IOP Publishing
Những chủ đề:
Silicon substrates
Photoelectric emission
Evaporation
Photovoltaic cells
Thin films
Energy gap
Photoelectric effect
Heterojunctions
Glass substrates
Cadmium tellurides
Optical properties
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Bài tóm tắt:In this works, CdTe was deposited on glass and Si substrates using thermal evaporation techniques. CdTe has been investigated from the properties (structural, surface morphological, optical and electrical). XRD analyses found the monocrystallite, cubic structure of the CdTe thin film and there is no trace of the other material. UV-Vis measurements indicate that 1.51 eV was found the energy gap of the CdTe thin film. Ag/CdTe/Si/Ag The heterojunction Photodetector has two response peaks located at 450 nm and 900 nm with a maximum sensitivity and detectivity of Ag/CdTe/Si/Ag 0.22 A/W and 3.1×1012 respectively.
số ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1963/1/012137
Nguồn:Advanced Technologies & Aerospace Database