A Coaxial Nozzle Attachment Improving the Homogeneity of the Gas Flow Sputtering
Guardado en:
| Publicado en: | Coatings vol. 14, no. 3 (2024), p. 279 |
|---|---|
| Autor principal: | |
| Otros Autores: | , , , , |
| Publicado: |
MDPI AG
|
| Materias: | |
| Acceso en línea: | Citation/Abstract Full Text + Graphics Full Text - PDF |
| Etiquetas: |
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
MARC
| LEADER | 00000nab a2200000uu 4500 | ||
|---|---|---|---|
| 001 | 2992555397 | ||
| 003 | UK-CbPIL | ||
| 022 | |a 2079-6412 | ||
| 024 | 7 | |a 10.3390/coatings14030279 |2 doi | |
| 035 | |a 2992555397 | ||
| 045 | 2 | |b d20240101 |b d20241231 | |
| 084 | |a 231445 |2 nlm | ||
| 100 | 1 | |a Alktash, Nivin |u Technology for Thin-Film Devices, Institute for High-Frequency and Semiconductor System Technologies, Technical University Berlin, Einsteinufer 25, 10587 Berlin, Germany<email>bernd.szyszka@tu-berlin.de</email> (B.S.) | |
| 245 | 1 | |a A Coaxial Nozzle Attachment Improving the Homogeneity of the Gas Flow Sputtering | |
| 260 | |b MDPI AG |c 2024 | ||
| 513 | |a Journal Article | ||
| 520 | 3 | |a The Hollow Cathode Gas Flow Sputtering (GFS) provides special plasma conditions and is of extensive interest as a more affordable alternative to the high vacuum sputtering techniques. In the case of the tubular cathode a circular outlet symmetry stipulates homogeneity issues for both metallic and reactive deposition regimes. Using the results of Direct Simulation Monte Carlo (DSMC), we propose an external coaxial attachment which is manufactured and examined in a nozzle and a diffuser positioning. The impact on the homogeneity of Ti and <inline-formula>TiO2</inline-formula> films is examined using profilometry and spectral ellipsometry. Our results demonstrate that the use of the nozzle attachment significantly enhances film homogeneity from about 3 <inline-formula>cm2</inline-formula> to more than 12 <inline-formula>cm2</inline-formula>. It also secures better process control in terms of oxygen stoichiometry and film thickness. Some crucial general issues of the reactive GFS process are discussed. | |
| 651 | 4 | |a Germany | |
| 653 | |a Stoichiometry | ||
| 653 | |a Attachment | ||
| 653 | |a Direct simulation Monte Carlo method | ||
| 653 | |a Organic chemicals | ||
| 653 | |a Simulation | ||
| 653 | |a High vacuum | ||
| 653 | |a Plasma | ||
| 653 | |a Poisoning | ||
| 653 | |a Gases | ||
| 653 | |a Ellipsometry | ||
| 653 | |a Glass substrates | ||
| 653 | |a Gas flow | ||
| 653 | |a Titanium | ||
| 653 | |a Process controls | ||
| 653 | |a Titanium dioxide | ||
| 653 | |a Film thickness | ||
| 653 | |a Homogeneity | ||
| 653 | |a Optical properties | ||
| 653 | |a Hollow cathodes | ||
| 653 | |a Coaxial nozzles | ||
| 653 | |a Cathode sputtering | ||
| 653 | |a Diffusers | ||
| 653 | |a Thin films | ||
| 700 | 1 | |a Körner, Stefan |u Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54e, 38108 Braunschweig, Germany<email>andreas.pflug@mailbox.org</email> (A.P.) | |
| 700 | 1 | |a Liu, Tianhao |u Technology for Thin-Film Devices, Institute for High-Frequency and Semiconductor System Technologies, Technical University Berlin, Einsteinufer 25, 10587 Berlin, Germany<email>bernd.szyszka@tu-berlin.de</email> (B.S.) | |
| 700 | 1 | |a Pflug, Andreas |u Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54e, 38108 Braunschweig, Germany<email>andreas.pflug@mailbox.org</email> (A.P.) | |
| 700 | 1 | |a Szyszka, Bernd |u Technology for Thin-Film Devices, Institute for High-Frequency and Semiconductor System Technologies, Technical University Berlin, Einsteinufer 25, 10587 Berlin, Germany<email>bernd.szyszka@tu-berlin.de</email> (B.S.) | |
| 700 | 1 | |a Muydinov, Ruslan |u Technology for Thin-Film Devices, Institute for High-Frequency and Semiconductor System Technologies, Technical University Berlin, Einsteinufer 25, 10587 Berlin, Germany<email>bernd.szyszka@tu-berlin.de</email> (B.S.) | |
| 773 | 0 | |t Coatings |g vol. 14, no. 3 (2024), p. 279 | |
| 786 | 0 | |d ProQuest |t Materials Science Database | |
| 856 | 4 | 1 | |3 Citation/Abstract |u https://www.proquest.com/docview/2992555397/abstract/embedded/75I98GEZK8WCJMPQ?source=fedsrch |
| 856 | 4 | 0 | |3 Full Text + Graphics |u https://www.proquest.com/docview/2992555397/fulltextwithgraphics/embedded/75I98GEZK8WCJMPQ?source=fedsrch |
| 856 | 4 | 0 | |3 Full Text - PDF |u https://www.proquest.com/docview/2992555397/fulltextPDF/embedded/75I98GEZK8WCJMPQ?source=fedsrch |