Electrothermal Failure Physics of GaN Schottky Diodes Under High-Temperature Forward Biasing
محفوظ في:
| الحاوية / القاعدة: | Micromachines vol. 16, no. 3 (2025), p. 242 |
|---|---|
| المؤلف الرئيسي: | |
| مؤلفون آخرون: | , , , |
| منشور في: |
MDPI AG
|
| الموضوعات: | |
| الوصول للمادة أونلاين: | Citation/Abstract Full Text + Graphics Full Text - PDF |
| الوسوم: |
لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
|
| مستخلص: | The reliability of GaN-based devices operating under high temperatures is crucial for their application in extreme environments. To identify the fundamental mechanisms behind high-temperature degradation, we investigated GaN-on-sapphire Schottky barrier diodes (SBDs) under simultaneous heating and electrical biasing. We observed the degradation mechanisms in situ inside a transmission electron microscope (TEM) using a custom-fabricated chip for simultaneous thermal and electrical control. The pristine device exhibited a high density of extended defects, primarily due to lattice mismatch and thermal expansion differences between the GaN and sapphire. TEM and STEM imaging, coupled with energy-dispersive X-ray spectroscopy (EDS), revealed the progressive degradation of the diode with increasing bias and temperature. At higher bias levels (4–5 V) and elevated temperatures (300–455 °C), the interdiffusion and alloying of the Au/Pd Schottky metal stack with GaN, along with defect generation near the interface, resulted in Schottky contact failure and catastrophic device degradation. A geometric phase analysis further identified strain localization and lattice distortions induced by thermal and electrical stresses, which facilitated diffusion pathways for rapid metal atom migration. These findings highlight that defect-mediated electrothermal degradation and interfacial chemical reactions are critical elements in the high-temperature failure physics of GaN Schottky diodes. |
|---|---|
| تدمد: | 2072-666X |
| DOI: | 10.3390/mi16030242 |
| المصدر: | Engineering Database |