Electrothermal Failure Physics of GaN Schottky Diodes Under High-Temperature Forward Biasing
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| Publicado en: | Micromachines vol. 16, no. 3 (2025), p. 242 |
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| Autor principal: | |
| Otros Autores: | , , , |
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MDPI AG
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| Acceso en línea: | Citation/Abstract Full Text + Graphics Full Text - PDF |
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| LEADER | 00000nab a2200000uu 4500 | ||
|---|---|---|---|
| 001 | 3181672178 | ||
| 003 | UK-CbPIL | ||
| 022 | |a 2072-666X | ||
| 024 | 7 | |a 10.3390/mi16030242 |2 doi | |
| 035 | |a 3181672178 | ||
| 045 | 2 | |b d20250101 |b d20251231 | |
| 084 | |a 231537 |2 nlm | ||
| 100 | 1 | |a Nahid Sultan Al-Mamun |u Department of Mechanical Engineering, Penn State University, University Park, PA 16802, USA; <email>nma5621@psu.edu</email> | |
| 245 | 1 | |a Electrothermal Failure Physics of GaN Schottky Diodes Under High-Temperature Forward Biasing | |
| 260 | |b MDPI AG |c 2025 | ||
| 513 | |a Journal Article | ||
| 520 | 3 | |a The reliability of GaN-based devices operating under high temperatures is crucial for their application in extreme environments. To identify the fundamental mechanisms behind high-temperature degradation, we investigated GaN-on-sapphire Schottky barrier diodes (SBDs) under simultaneous heating and electrical biasing. We observed the degradation mechanisms in situ inside a transmission electron microscope (TEM) using a custom-fabricated chip for simultaneous thermal and electrical control. The pristine device exhibited a high density of extended defects, primarily due to lattice mismatch and thermal expansion differences between the GaN and sapphire. TEM and STEM imaging, coupled with energy-dispersive X-ray spectroscopy (EDS), revealed the progressive degradation of the diode with increasing bias and temperature. At higher bias levels (4–5 V) and elevated temperatures (300–455 °C), the interdiffusion and alloying of the Au/Pd Schottky metal stack with GaN, along with defect generation near the interface, resulted in Schottky contact failure and catastrophic device degradation. A geometric phase analysis further identified strain localization and lattice distortions induced by thermal and electrical stresses, which facilitated diffusion pathways for rapid metal atom migration. These findings highlight that defect-mediated electrothermal degradation and interfacial chemical reactions are critical elements in the high-temperature failure physics of GaN Schottky diodes. | |
| 653 | |a Silicon | ||
| 653 | |a Microelectromechanical systems | ||
| 653 | |a Sapphire | ||
| 653 | |a Bias | ||
| 653 | |a Chemical reactions | ||
| 653 | |a Semiconductors | ||
| 653 | |a Strain localization | ||
| 653 | |a Electric contacts | ||
| 653 | |a Misfit dislocations | ||
| 653 | |a Extreme environments | ||
| 653 | |a Intermetallic compounds | ||
| 653 | |a Degradation | ||
| 653 | |a Transistors | ||
| 653 | |a Thermal expansion | ||
| 653 | |a Defects | ||
| 653 | |a High temperature | ||
| 653 | |a Gold | ||
| 653 | |a Transmission electron microscopy | ||
| 653 | |a Diodes | ||
| 653 | |a Interdiffusion | ||
| 653 | |a Gallium nitrides | ||
| 653 | |a Temperature | ||
| 653 | |a Failure | ||
| 653 | |a Etching | ||
| 653 | |a Palladium | ||
| 653 | |a Schottky diodes | ||
| 700 | 1 | |a Du, Yuxin |u Department of Electrical Engineering, Penn State University, University Park, PA 16802, USA; <email>yqd5203@psu.edu</email> (Y.D.); <email>jus824@psu.edu</email> (J.S.) | |
| 700 | 1 | |a Song, Jianan |u Department of Electrical Engineering, Penn State University, University Park, PA 16802, USA; <email>yqd5203@psu.edu</email> (Y.D.); <email>jus824@psu.edu</email> (J.S.) | |
| 700 | 1 | |a Chu, Rongming |u Department of Electrical Engineering, Penn State University, University Park, PA 16802, USA; <email>yqd5203@psu.edu</email> (Y.D.); <email>jus824@psu.edu</email> (J.S.) | |
| 700 | 1 | |a Haque, Aman |u Department of Mechanical Engineering, Penn State University, University Park, PA 16802, USA; <email>nma5621@psu.edu</email> | |
| 773 | 0 | |t Micromachines |g vol. 16, no. 3 (2025), p. 242 | |
| 786 | 0 | |d ProQuest |t Engineering Database | |
| 856 | 4 | 1 | |3 Citation/Abstract |u https://www.proquest.com/docview/3181672178/abstract/embedded/7BTGNMKEMPT1V9Z2?source=fedsrch |
| 856 | 4 | 0 | |3 Full Text + Graphics |u https://www.proquest.com/docview/3181672178/fulltextwithgraphics/embedded/7BTGNMKEMPT1V9Z2?source=fedsrch |
| 856 | 4 | 0 | |3 Full Text - PDF |u https://www.proquest.com/docview/3181672178/fulltextPDF/embedded/7BTGNMKEMPT1V9Z2?source=fedsrch |