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Comparative Analysis of Digital Circuits in CNTFET and CMOS Technology: A Review

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Опубліковано в::i-Manager's Journal on Electronics Engineering vol. 16, no. 1 (Dec 2025)
Автор: Marani, Roberto
Інші автори: Perri, Anna Gina
Опубліковано:
iManager Publications
Предмети:
Power management
CMOS
Digital electronics
Circuits
Computer engineering
Simulation
Libraries
Transistors
Hypotheses
Comparative analysis
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Короткий огляд:This paper reviews in depth a procedure to compare the performance of CNTFET and MOSFET devices through the design of a SRAM cell. The results indicate that both technologies enable the realization of low-power devices, with CNTFET technology exhibiting higher speed. Comparative simulations highlight significant improvements in switching delay and energy efficiency when operating in the sub-threshold region using CNTFETs. The findings confirm CNTFET suitability for ultra-low-power and high-frequency applications, positioning it as a strong alternative to traditional CMOS in next-generation memory architectures.
ISSN:2229-7286
2249-0760
DOI:10.26634/jele.16.1.22210
Джерело:Advanced Technologies & Aerospace Database