Soft-Error-Resilient Static Random Access Memory with Enhanced Write Ability for Radiation Environments
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| Publicado en: | Micromachines vol. 16, no. 11 (2025), p. 1212-1226 |
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| Otros Autores: | , |
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MDPI AG
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| Acceso en línea: | Citation/Abstract Full Text + Graphics Full Text - PDF |
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| 022 | |a 2072-666X | ||
| 024 | 7 | |a 10.3390/mi16111212 |2 doi | |
| 035 | |a 3275543329 | ||
| 045 | 2 | |b d20250101 |b d20251231 | |
| 084 | |a 231537 |2 nlm | ||
| 100 | 1 | |a Park Se-Yeon |u Department of Semiconductor Engineering, Tech University of Korea, Siheung 15073, Republic of Korea; goofysis@tukorea.ac.kr | |
| 245 | 1 | |a Soft-Error-Resilient Static Random Access Memory with Enhanced Write Ability for Radiation Environments | |
| 260 | |b MDPI AG |c 2025 | ||
| 513 | |a Journal Article | ||
| 520 | 3 | |a As semiconductor technologies advance, SRAM cells deployed in space systems face heightened sensitivity to radiation-induced soft errors. In conventional 6T SRAM, when high-energy particles strike sensitive nodes, single-event upsets (SEUs) may occur, flipping stored bits. Furthermore, with aggressive scaling, charge sharing among adjacent devices can trigger single-event multi-node upsets (SEMNU). To address these reliability concerns, this study presents a radiation-hardened SRAM design, SHWA18T, tailored for space applications. The proposed architecture is evaluated against IASE16T, PRO14T, PRO16T, QCCS, SIRI, and SEA14T. Simulation analysis demonstrates that SHWA18T achieves improved performance, particularly in terms of critical charge and write capability. The design was implemented in 90 nm CMOS technology at a 1 V supply. With enhanced robustness, the cell withstands both SEUs and SEMNUs, thereby guaranteeing stable data retention in space environments. | |
| 653 | |a Static random access memory | ||
| 653 | |a Soft errors | ||
| 653 | |a Random access memory | ||
| 653 | |a Satellite communications | ||
| 653 | |a Radiation hardening | ||
| 653 | |a Critical path | ||
| 653 | |a Transistors | ||
| 653 | |a Aerospace environments | ||
| 653 | |a Radiation | ||
| 653 | |a Radiation effects | ||
| 653 | |a Single event upsets | ||
| 700 | 1 | |a Jeong, Eun Gyo |u Department of Electronics Engineering, Incheon National University (INU), 119 Academy-ro, Yeonsu-gu, Incheon 22012, Republic of Korea | |
| 700 | 1 | |a Sung-Hun, Jo |u Division of System Semiconductor, Dongguk University, Seoul 04620, Republic of Korea | |
| 773 | 0 | |t Micromachines |g vol. 16, no. 11 (2025), p. 1212-1226 | |
| 786 | 0 | |d ProQuest |t Engineering Database | |
| 856 | 4 | 1 | |3 Citation/Abstract |u https://www.proquest.com/docview/3275543329/abstract/embedded/7BTGNMKEMPT1V9Z2?source=fedsrch |
| 856 | 4 | 0 | |3 Full Text + Graphics |u https://www.proquest.com/docview/3275543329/fulltextwithgraphics/embedded/7BTGNMKEMPT1V9Z2?source=fedsrch |
| 856 | 4 | 0 | |3 Full Text - PDF |u https://www.proquest.com/docview/3275543329/fulltextPDF/embedded/7BTGNMKEMPT1V9Z2?source=fedsrch |