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Investigation of the Damage Characteristics and Mechanisms in Silicon Carbide Crystals Induced by Nanosecond Pulsed Lasers at the Fundamental Frequency

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Publicado en:Photonics vol. 12, no. 12 (2025), p. 1207-1221
Autor principal: Xu Penghao
Otros Autores: Wang Erxi, Wang, Teng, Chong, Shan, Zhao, Xiaohui, Kou Huamin, Jiang, Dapeng, Wu Qinghui, Zhan, Sui, Gao Yanqi
Publicado:
MDPI AG
Materias:
Silicon
Nanosecond pulses
Single crystals
Nitrogen
Absorption
Yield point
Radiation damage
Damage assessment
Laser radiation
Multidimensional methods
Dimensional analysis
Heat conductivity
Silicon carbide
Test methods
Crystal surfaces
Pulsed lasers
Efficiency
Laser damage
Crystals
Lasers
Infrared lasers
Machining
Resonant frequencies
Crystal defects
Probability
Irradiation
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Resumen:Silicon carbide (SiC) single crystals are extensively utilized in various fields due to their exceptional properties, such as a wide bandgap and a high breakdown threshold. Nevertheless, the intrinsic high hardness of SiC creates significant challenges for contact machining. This study investigates the surface damage characteristics and underlying mechanisms involved in processing both high-purity silicon carbide (HP-SiC) and nitrogen-doped silicon carbide (N-SiC) crystals using fundamental-frequency nanosecond pulsed lasers. This study establishes a laser-induced damage threshold (LIDT) testing platform and employs the internationally standardized 1-ON-1 test method to evaluate the damage characteristics of HP-SiC and N-SiC crystals under single-pulse laser irradiation. Experimental results indicate that N-SiC crystals exhibit superior absorption characteristics and a lower LIDT compared with HP-SiC crystals. Subsequently, a defect analysis model was established to conduct a theoretical examination of defect information across various types of SiC. Under fundamental-frequency nanosecond pulsed laser irradiation, N-SiC crystals demonstrate a lower average damage threshold and a broader defect damage threshold distribution than their HP-SiC counterparts. By integrating multi-dimensional analytical methods—including photothermal weak absorption mechanisms and damage morphology analysis—the underlying damage mechanisms of the distinct SiC forms were comprehensively elucidated. Moreover, although N-SiC crystals show weaker photothermal absorption properties, they exhibit more pronounced absorption and damage response processes. These factors collectively account for the different laser damage resistances observed in the two types of silicon carbide crystals, implying that distinct processing methodologies should be employed for nanosecond pulsed laser treatment of different SiC crystals. This paper elucidates the damage characteristics of various SiC materials induced by near-infrared nanosecond pulsed lasers and explores their underlying physical mechanisms. Additionally, it provides reliable data and a comprehensive mechanistic explanation for the efficient removal of these materials in practical applications.
ISSN:2304-6732
DOI:10.3390/photonics12121207
Fuente:Advanced Technologies & Aerospace Database