Investigation of the Damage Characteristics and Mechanisms in Silicon Carbide Crystals Induced by Nanosecond Pulsed Lasers at the Fundamental Frequency

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Опубликовано в::	Photonics vol. 12, no. 12 (2025), p. 1207-1221
Главный автор:	Xu Penghao
Другие авторы:	Wang Erxi, Wang, Teng, Chong, Shan, Zhao, Xiaohui, Kou Huamin, Jiang, Dapeng, Wu Qinghui, Zhan, Sui, Gao Yanqi
Опубликовано:	MDPI AG
Предметы:	Silicon Nanosecond pulses Single crystals Nitrogen Absorption Yield point Radiation damage Damage assessment Laser radiation Multidimensional methods Dimensional analysis Heat conductivity Silicon carbide Test methods Crystal surfaces Pulsed lasers Efficiency Laser damage Crystals Lasers Infrared lasers Machining Resonant frequencies Crystal defects Probability Irradiation
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