Investigation of the Damage Characteristics and Mechanisms in Silicon Carbide Crystals Induced by Nanosecond Pulsed Lasers at the Fundamental Frequency

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Detalles Bibliográficos
Publicado en:	Photonics vol. 12, no. 12 (2025), p. 1207-1221
Autor principal:	Xu Penghao
Otros Autores:	Wang Erxi, Wang, Teng, Chong, Shan, Zhao, Xiaohui, Kou Huamin, Jiang, Dapeng, Wu Qinghui, Zhan, Sui, Gao Yanqi
Publicado:	MDPI AG
Materias:	Silicon Nanosecond pulses Single crystals Nitrogen Absorption Yield point Radiation damage Damage assessment Laser radiation Multidimensional methods Dimensional analysis Heat conductivity Silicon carbide Test methods Crystal surfaces Pulsed lasers Efficiency Laser damage Crystals Lasers Infrared lasers Machining Resonant frequencies Crystal defects Probability Irradiation
Acceso en línea:	Citation/Abstract Full Text + Graphics Full Text - PDF
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