Strain-Driven Dewetting and Interdiffusion in SiGe Thin Films on SOI for CMOS-Compatible Nanostructures

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Pubblicato in:	Nanomaterials vol. 15, no. 13 (2025), p. 965-979
Autore principale:	Freddi Sonia
Altri autori:	Gherardi, Michele, Chiappini, Andrea, Adam, Arette-Hourquet, Berbezier Isabelle, Fedorov Alexey, Chrastina, Daniel, Bollani, Monica
Pubblicazione:	MDPI AG
Soggetti:	Silicon Nucleation Energy dispersive X ray spectroscopy Scanning electron microscopy Investigations Strain relaxation Drying Molecular beam epitaxy X-ray diffraction Silicon substrates Atomic force microscopy Raman spectroscopy Thin films Annealing Epitaxial growth Germanium Spectrum analysis Silicon germanides Interdiffusion Nanostructure Lasers Temperature Concentration gradient Etching CMOS Nanocrystals SOI (semiconductors) Quantum dots X-ray spectroscopy Microscopy Morphology
Accesso online:	Citation/Abstract Full Text + Graphics Full Text - PDF
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