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Soft-Error-Resilient Static Random Access Memory with Enhanced Write Ability for Radiation Environments

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Publicado no:Micromachines vol. 16, no. 11 (2025), p. 1212-1226
Autor principal: Park Se-Yeon
Outros Autores: Jeong, Eun Gyo, Sung-Hun, Jo
Publicado em:
MDPI AG
Assuntos:
Static random access memory
Soft errors
Random access memory
Satellite communications
Radiation hardening
Critical path
Transistors
Aerospace environments
Radiation
Radiation effects
Single event upsets
Acesso em linha:Citation/Abstract
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