Artificial Neural Network based Modelling for Variational Effect on Double Metal Double Gate Negative Capacitance FET

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Dades bibliogràfiques
Publicat a:	arXiv.org (Dec 18, 2024), p. n/a
Autor principal:	Pathak, Yash
Altres autors:	Laxman Prasad Goswami, Bansi Dhar Malhotra, Chaujar, Rishu
Publicat:	Cornell University Library, arXiv.org
Matèries:	Integrated circuits Nanotechnology devices Field effect transistors Artificial neural networks Ferroelectric materials Neural networks Nanoelectronics Capacitance Visual fields Computing costs Algorithms High level languages Python Ferroelectricity Semiconductor devices Machine learning Visual effects Leakage current Parameters Thickness
Accés en línia:	Citation/Abstract Full text outside of ProQuest
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