Artificial Neural Network based Modelling for Variational Effect on Double Metal Double Gate Negative Capacitance FET

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Bibliografski detalji
Izdano u:	arXiv.org (Dec 18, 2024), p. n/a
Glavni autor:	Pathak, Yash
Daljnji autori:	Laxman Prasad Goswami, Bansi Dhar Malhotra, Chaujar, Rishu
Izdano:	Cornell University Library, arXiv.org
Teme:	Integrated circuits Nanotechnology devices Field effect transistors Artificial neural networks Ferroelectric materials Neural networks Nanoelectronics Capacitance Visual fields Computing costs Algorithms High level languages Python Ferroelectricity Semiconductor devices Machine learning Visual effects Leakage current Parameters Thickness
Online pristup:	Citation/Abstract Full text outside of ProQuest
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