Artificial Neural Network based Modelling for Variational Effect on Double Metal Double Gate Negative Capacitance FET

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Bibliografske podrobnosti
izdano v:	arXiv.org (Dec 18, 2024), p. n/a
Glavni avtor:	Pathak, Yash
Drugi avtorji:	Laxman Prasad Goswami, Bansi Dhar Malhotra, Chaujar, Rishu
Izdano:	Cornell University Library, arXiv.org
Teme:	Integrated circuits Nanotechnology devices Field effect transistors Artificial neural networks Ferroelectric materials Neural networks Nanoelectronics Capacitance Visual fields Computing costs Algorithms High level languages Python Ferroelectricity Semiconductor devices Machine learning Visual effects Leakage current Parameters Thickness
Online dostop:	Citation/Abstract Full text outside of ProQuest
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